msx1pb, msx1pd, msx1pg, MSX1PJ www.vishay.com vishay general semiconductor revision: 24-jan-18 1 document number: 87726 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 surface-mount esd capability rectifier features ? very low profile - typical height of 0.65 mm ? ideal for automated placement ? oxide planar chip junction ? low forward voltage drop, low leakage current ? esd capability ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? aec-q101 qualified available ? - automotive ordering code: base p/nhm3 ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 typical applications general purpose, polarity protection, an d rail-to-rail protection in commercial, industrial, and automotive applications. mechanical data case: microsmp (do-219ad) ? molding compound meets ul 94 v-0 flammability rating base p/n-m3 - halogen-free and rohs-compliant ? base p/nhm3 - halogen-free, rohs-compliant, and aec-q101 qualified terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 ? m3 and hm3 suffix meets jesd 201 class 2 whisker test polarity: color band denotes the cathode end notes (1) pulse test: 300 s pulse width, 1 % duty cycle (2) pulse test: pulse width ? 40 ms primary characteristics i f(av) 1.0 a v rrm 100 v, 200 v, 400 v, 600 v i fsm 18 a v f at i f = 1.0 a (125 c) 0.9 v t j max. 175 c package microsmp (do-219ad) diode variations single microsmp (do-219ad) esmp ? series top view bottom view available maximum ratings (t a = 25 c unless otherwise noted) parameter symbol msx1pb msx1pd msx1pg MSX1PJ unit device marking code xb xd xg xj maximum repetitive peak reverse voltage v rrm 100 200 400 600 v maximum average forward rectified current i f(av) 1.0 a peak forward surge current 10 ms single half sine-wave superimposed on rated load i fsm 18 a operating junction and storage temperature range t j , t stg -55 to +175 c electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol typ. max. unit maximum instantaneous forward voltage i f = 0.5 a t a = 25 c v f (1) 0.93 - v i f = 1.0 a 1.0 1.1 i f = 0.5 a t a = 125 c 0.81 - i f = 1.0 a 0.9 0.98 maximum reverse current rated v r t a = 25 c i r (2) -1.0 a t a = 125 c 4.1 50 typical reverse recovery time i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a t rr 960 - ns typical junction capa citance 4.0 v, 1 mhz c j 5-pf
msx1pb, msx1pd, msx1pg, MSX1PJ www.vishay.com vishay general semiconductor revision: 24-jan-18 2 document number: 87726 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) thermal resistance from junction to ambi ent and junction to lead mounted on pcb with 5.0 mm x 5.0 mm copper pad areas. r ? jl is measured ? at the terminal of cathode band notes (1) immunity to iec 61000-4-2 ai r discharge mode has a typical perf ormance > 30 kv (2) system esd standard note (1) aec-q101 qualified thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol msx1pb msx1pd msx1pg MSX1PJ unit typical thermal resistance r ? ja (1) 110 c/w r ? jl (1) 30 immunity to electrical static di scharge to the following standards ? (t a = 25 c, unless otherwise noted) standard test type test conditions symbol class value aec-q101-001 human body model (conta ct mode) c = 100 pf, r = 1.5 k ? v c h3b > 8 kv aec-q101-002 machine model (contact mode) c = 200 pf, r = 0 ? m4 > 400 v jesd 22-a114 human body model (con tact mode) c = 100 pf, r = 1.5 k ? 3b > 8 kv jesd 22-a115 machine model (con tact mode) c = 200 pf, r = 0 ? c > 400 v iec 61000-4-2 (2) human body model (contact mode) c = 150 pf, r = 330 ? 4> 8 kv human body model (a ir-discharge mode) (1) c = 150 pf, r = 330 ? 4 > 15 kv iso 10605 contact mode c = 330 pf, r = 2 k ? - 20 kv typ. ordering information (example) preferred p/n unit weight (g) preferred pa ckage code base quantity delivery mode MSX1PJ-m3/89a 0.006 89a 4500 7" diam eter plastic tape and reel MSX1PJhm3/89a (1) 0.006 89a 4500 7" diameter plastic tape and reel
msx1pb, msx1pd, msx1pg, MSX1PJ www.vishay.com vishay general semiconductor revision: 24-jan-18 3 document number: 87726 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - maximum forward current derating curve fig. 2 - average power loss characteristics fig. 3 - typical instantaneous forward characteristics fig. 4 - typical reverse leakage characteristics fig. 5 - typical j unction capacitance fig. 6 - typical transient thermal impedance 0 0.2 0.4 0.6 0.8 1 1.2 0 255075100125150175 average forward rectified current (a) ca s e temperature ( c) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 0.2 0.4 0.6 0.8 1 1.2 average power lo ss (w) average forward current (a) d = 0.1 d = 0.2 d = 0.3 d = 0.5 d = 1.0 d = 0.8 d = t p /t t t p 0.01 0.1 1 10 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 in s tantaneou s forward current (a) in s tantaneou s forward voltage (v) t j = 150 c t j = 25 c t j = 100 c t j = 125 c t j = 175 c t j = 75 c t j = -40 c 0.001 0.01 0.1 1 10 100 20 40 60 80 100 in s tantaneou s rever s e current (a) percent of rated peak rever s e voltage (%) t j = 150 c t j = 125 c t j = 100 c t j = 25 c t j = 75 c t j = 175 c 0.1 1 10 100 0.1 1 10 100 junction capacitance (pf) rever s e voltage (v) t j = 25 c f = 1.0 mhz v s ig = 50 mv p-p 0.1 1 10 0.01 0.1 1 10 100 tran s ient thermal impedance ( c/w) t - pul s e duration ( s ) junction to ca s e
msx1pb, msx1pd, msx1pg, MSX1PJ www.vishay.com vishay general semiconductor revision: 24-jan-18 4 document number: 87726 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 7 - esd dispersion map package outline dimensions in inches (millimeters) 10 15 20 25 30 35 electro s tatic di s charge e s d (kv) c = 330 pf, r = 2 k 0.106 (2.70) 0.091 (2.30) 0.055 (1.40) 0.047 (1.20) cathode band micro s mp (do-219ad) 0.030 (0.75) 0.022 (0.55) 0.030 (0.75) 0.022 (0.55) 0.059 (1.50) 0.043 (1.10) 0.039 (0.98) 0.031 (0.78) 0.091 (2.30) 0.083 (2.10) 0.020 (0.50) 0.043 (1.10) 0.011 (0.27) 0.005 (0.12) 0.079 (2.00) 0.032 (0.80) 0.032 (0.80) mountin g pad layout 0.029 (0.73) 0.025 (0.63)
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